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skp06n60 ska06n60 1 rev. 2.3 sep 07 fast igbt in npt-technology with soft, fast recovery anti-parallel emcon diode ? 75% lower e off compared to previous generation combined with low conduction losses ? short circuit withstand time ? 10 s ? designed for: motor controls, inverter ? npt-technology for 600v applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability ? very soft, fast recovery anti-parallel emcon diode ? isolated to-220, 2.5kv, 60s ? pb-free lead plating; rohs compliant ? qualified according to jedec 1 for target applications ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c v ce(sat ) t j marking package skp06n60 600v 6a 2.3v 150 c k06n60 pg-to-220-3-1 ska06n60 600v 5a 2.3v 150 c k06n60 pg-to-220-3-31 / -111 maximum ratings value parameter symbol skp06n60 ska06n60 unit collector-emitter voltage v ce 600 600 v dc collector current t c = 25 c t c = 100 c i c 12 6.9 9 5.0 pulsed collector current, t p limited by t jmax i cpuls 24 24 turn off safe operating area v ce 600v, t j 150 c - 24 24 diode forward current t c = 25 c t c = 100 c i f 12 6 12 6 diode pulsed current, t p limited by t jmax i fpuls 24 24 a gate-emitter voltage v ge 20 20 v short circuit withstand time 2 v ge = 15v, v cc 600v, t j 150 c t sc 10 10 s power dissipation t c = 25 c p tot 68 32 w mounting torque, screw: m2.5 (fullpak), m3 (to220) 3 m 0.6 0.5 nm operating junction and storage temperature t j , t stg -55...+150 -55...+150 c soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s t s 260 260 c 1 j-std-020 and jesd-022 2 allowed number of short circuits: <1000; time between short circuits: >1s. 3 maximum mounting processes: 3 pg-to-220-3-1 (to-220ab) pg-to-220-3-31 / -111 (fullpak) g c e
skp06n60 ska06n60 2 rev. 2.3 sep 07 thermal resistance max. value parameter symbol conditions skp06n60 ska06n60 unit characteristic igbt thermal resistance, junction ? case r thjc 1.85 3.9 diode thermal resistance, junction ? case r thjcd 3.5 5.0 thermal resistance, junction ? ambient r thja pg-to-220-3-1 pg-to220-3-31 /-111 62 65 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 a 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =6a t j =25 c t j =150 c 1.7 - 2.0 2.3 2.4 2.8 diode forward voltage v f v ge =0v, i f =6a t j =25 c t j =150 c 1.2 - 1.4 1.25 1.8 1.65 gate-emitter threshold voltage v ge(th) i c =250 a, v ce = v ge 3 4 5 v zero gate voltage collector current i ces v ce =600v, v ge =0v t j =25 c t j =150 c - - - - 20 700 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =6a - 4.2 - s dynamic characteristic input capacitance c iss - 350 420 output capacitance c oss - 38 46 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 23 28 pf gate charge q gate v cc =480v, i c =6a v ge =15v - 32 42 nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 7 - nh short circuit collector current 2) i c(sc) v ge =15v, t sc 10 s v cc 600v, t j 150 c - 60 - a 2) allowed number of short circuits: <1000; time between short circuits: >1s.
skp06n60 ska06n60 3 rev. 2.3 sep 07 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 25 30 rise time t r - 18 22 turn-off delay time t d(off) - 220 264 fall time t f - 54 65 ns turn-on energy e on - 0.110 0.127 turn-off energy e off - 0.105 0.137 total switching energy e ts t j =25 c, v cc =400v, i c =6a, v ge =0/15v, r g =50 ? , l 1) =180nh, c 1) =250pf energy losses include ?tail? and diode reverse recovery. - 0.215 0.263 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 200 17 183 - - - ns diode reverse recovery charge q rr - 200 - nc diode peak reverse recovery current i rrm - 2.8 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =25 c, v r =200v, i f =6a, di f /dt =200a/ s - 180 - a/ s switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 24 29 rise time t r - 17 20 turn-off delay time t d(off) - 248 298 fall time t f - 70 84 ns turn-on energy e on - 0.167 0.192 turn-off energy e off - 0.153 0.199 total switching energy e ts t j =150 c v cc =400v, i c =6a, v ge =0/15v, r g =50 ? , l 1) =180nh, c 1) =250pf energy losses include ?tail? and diode reverse recovery. - 0.320 0.391 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 290 27 263 - - - ns diode reverse recovery charge q rr - 500 - nc diode peak reverse recovery current i rrm - 5.0 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =150 c v r =200v, i f =6a, di f /dt =200a/ s - 200 - a/ s 1) leakage inductance l a nd stray capacity c due to dynamic test circuit in figure e.
skp06n60 ska06n60 4 rev. 2.3 sep 07 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 10a 20a 30a skp06n60 ska06n60 t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a skp06n60 ska06n60 dc 1ms 200 s 50 s 15 s t p =2 s f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 150 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 50 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 150 c) p tot , power dissipation 25c 50c 75c 100c 125c 0w 20w 40w 60w 80w skp06n60 ska06n60 i c , collector current 25c 50c 75c 100c 125c 0a 5a 10a ska06n60 skp06n60 t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 150 c) i c i c
skp06n60 ska06n60 5 rev. 2.3 sep 07 i c , collector current 0v 1v 2v 3v 4v 5v 0a 5a 10a 15a 20a 15v 13v 11v 9v 7v 5v v ge =20v i c , collector current 0v 1v 2v 3v 4v 5v 0a 5a 10a 15a 20a 15v 13v 11v 9v 7v 5v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristics ( t j = 25 c) figure 6. typical output characteristics ( t j = 150 c) i c , collector current 0v 2v 4v 6v 8v 10v 0a 2a 4a 6a 8a 10a 12a 14a 16a 18a 20a -55c +150c t j =+25c v ce(sat) , collector - emitter saturation voltage -50c 0c 50c 100c 150c 1.0v 1.5v 2.0v 2.5v 3.0v 3.5v 4.0v v ge , gate - emitter voltage t j , junction temperature figure 7. typical transfer characteristics ( v ce = 10v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v) i c = 6a i c = 12a
skp06n60 ska06n60 6 rev. 2.3 sep 07 t , switching times 0a 3a 6a 9a 12a 15a 10ns 100ns t r t d(on) t f t d(off) t , switching times 0 ? 50 ? 100 ? 150 ? 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, r g = 50 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, i c = 6a, dynamic test circuit in figure e) t , switching times 0c 50c 100c 150c 10ns 100ns t r t d(on) t f t d(off) v ge(th) , gate - emitter threshold voltage -50c 0c 50c 100c 150c 2.0v 2.5v 3.0v 3.5v 4.0v 4.5v 5.0v 5.5v typ. min. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+15v, i c = 6a, r g = 50 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.25ma)
skp06n60 ska06n60 7 rev. 2.3 sep 07 e , switching energy losses 0a 3a 6a 9a 12a 15a 0.0mj 0.2mj 0.4mj 0.6mj 0.8mj e on * e off e ts * e , switching energy losses 0 ? 50 ? 100 ? 150 ? 0.0mj 0.2mj 0.4mj 0.6mj e ts * e on * e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, r g = 50 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, i c = 6a, dynamic test circuit in figure e) e , switching energy losses 0c 50c 100c 150c 0.0mj 0.1mj 0.2mj 0.3mj 0.4mj e ts * e on * e off t j , junction temperature figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+15v, i c = 6a, r g = 50 ? , dynamic test circuit in figure e) *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery.
skp06n60 ska06n60 8 rev. 2.3 sep 07 v ge , gate - emitter voltage 0nc 15nc 30nc 45nc 0v 5v 10v 15v 20v 25v 480v 120v c , capacitance 0v 10v 20v 30v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 16. typical gate charge ( i c = 6a) figure 17. typical capacitance as a function of collector-emitter voltage ( v ge = 0v, f = 1mhz) t sc , short circuit withstand time 10v 11v 12v 13v 14v 15v 0 s 5 s 10 s 15 s 20 s 25 i c(sc) , short circuit collector current 10v 12v 14v 16v 18v 20v 0a 20a 40a 60a 80a 100a v ge , gate - emitter voltage v ge , gate - emitter voltage figure 18. short circuit withstand time as a function of gate-emitter voltage ( v ce = 600v, start at t j = 25 c) figure 19. typical short circuit collector current as a function of gate-emitter voltage ( v ce 600v, t j = 150 c)
skp06n60 ska06n60 9 rev. 2.3 sep 07 t rr , reverse recovery time 50a/ s 150a/ s 250a/ s 350a/ s 450a/ s 550a/ s 0ns 100ns 200ns 300ns 400ns 500ns i f = 3a i f = 6a i f = 12a q rr , reverse recovery charge 50a/ s150a/ s 250a/ s 350a/ s 450a/ s 550a/ s 0nc 200nc 400nc 600nc 800nc 1000nc i f = 3a i f = 6a i f = 12a di f /dt , diode current slope di f /dt , diode current slope figure 20. typical reverse recovery time as a function of diode current slope ( v r = 200v, t j = 125 c, dynamic test circuit in figure e) figure 21. typical reverse recovery charge as a function of diode current slope ( v r = 200v, t j = 125 c, dynamic test circuit in figure e) i rr , reverse recovery current 50a/ s 150a/ s 250a/ s 350a/ s 450a/ s 550a/ s 0a 2a 4a 6a 8a 10a 12a i f = 3a i f = 12a i f = 6a di rr /dt , diode peak rate of fall of reverse recovery current 50a/ s 150a/ s 250a/ s 350a/ s 450a/ s 550a/ s 0a/ s 100a/ s 200a/ s 300a/ s 400a/ s 500a/ s 600a/ s di f /dt , diode current slope di f /dt , diode current slope figure 22. typical reverse recovery current as a function of diode current slope ( v r = 200v, t j = 125 c, dynamic test circuit in figure e) figure 23. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r = 200v, t j = 125 c, dynamic test circuit in figure e)
skp06n60 ska06n60 10 rev. 2.3 sep 07 i f , forward current 0.0v 0.5v 1.0v 1.5v 2.0v 0a 2a 4a 6a 8a 10a 12a 100c -55c 25c 150c v f , forward voltage -40c 0c 40c 80c 120c 1.0v 1.5v 2.0v v f , forward voltage t j , junction temperature figure 24. typical diode forward current as a function of forward voltage figure 25. typical diode forward voltage as a function of junction temperature z thjcd , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1s 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 z thjcd , transient thermal impedance 10s 100s 1ms 10ms 100ms 1s 10s 10 -2 k/w 10 -1 k/w 10 0 k/w 10 1 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t p , pulse width t p , pulse width figure 26. diode transient thermal impedance as a function of pulse width ( d = t p / t ) figure 27. diode transient thermal impedance as a function of pulse width ( d = t p / t ) i f = 6a i f = 12 a c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 0.523 7.25*10 -2 0.550 6.44*10 -3 0.835 7.13*10 -4 1.592 7.16*10 -5 c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 2.852 1.887 0.654 4.64*10 -2 0.665 2.88*10 -3 0.828 3.83*10 -4 skp06n60 ska06n60
skp06n60 ska06n60 11 rev. 2.3 sep 07 z thjc , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1 s 10 -3 k/w 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t p , pulse width z thjc , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1s 10s 10 -3 k/w 10 -2 k/w 10 -1 k/w 10 0 k/w 10 1 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t p , pulse width figure 28. igbt transient thermal impedance as a function of pulse width ( d = t p / t ) figure 29. igbt transient thermal impedance as a function of pulse width ( d = t p / t ) skp06n60 ska06n60 c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 0.705 0.0341 0.561 3.74e-3 0.583 3.25e-4 c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 2.73 1.83 0.395 2.93*10 -2 0.353 2.46*10 -3 0.323 3.45*10 -4
skp06n60 ska06n60 12 rev. 2.3 sep 07 pg-to220-3-1
skp06n60 ska06n60 13 rev. 2.3 sep 07 please refer to mounting instructions pg-to220-3-31 / pg-to220-3-111
skp06n60 ska06n60 14 rev. 2.3 sep 07 figure a. definition of switching times figure b. definition of switching losses i rrm 90% i rrm 10% i rrm di /dt f t rr i f i,v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j figure d. thermal equivalent circuit figure e. dynamic test circuit leakage inductance l =180nh a n d stray capacity c =250pf.
skp06n60 ska06n60 15 rev. 2.3 sep 07 edition 2006-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 9/12/07. all rights reserved. attention please! the information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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